Epitaxial graphene field-effect transistors on silicon substrates

Solid-State Electronics

Volumn 54, Issue 9, 2010, Pages 1010-1014

  Kang, Hyun Chul ^a   Karasawa, Hiromi ^a   Miyamoto, Yu ^a   Handa, Hiroyuki ^a   Suemitsu, Tetsuya ^a,b   Suemitsu, Maki ^a,b   Otsuji, Taiichi ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Contact resistance; FET; Graphene; Silicon

Indexed keywords

BACK-GATE; CHANNEL CURRENTS; EPITAXIAL GRAPHENE; EVALUATION METHOD; FET; GATE INSULATOR; GATE VOLTAGES; GATE-LEAKAGE CURRENT; SAMPLE SURFACE; SI SUBSTRATES; SIC SUBSTRATES; SILICON SUBSTRATES;

CONTACT RESISTANCE; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; MESFET DEVICES; SILICON CARBIDE; SMELTING; SUBSTRATES; ULTRAHIGH VACUUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954216568     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.018     Document Type: Conference Paper

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