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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 4, 2010, Pages 861-866

Resistivity characteristics of transparent conducting impurity-doped ZnO films for use in oxidizing environments at high temperatures

(4) Nomoto, Jun Ichi a Konagai, Manabu a Miyata, Toshihiro a Minami, Tadatsugu a

a KANAZAWA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER-HEAT TREATMENT; AL-DOPED ZNO; AZO THIN FILMS; CRYSTALLINITIES; DC MAGNETRON SPUTTERING; DEPOSITED FILMS; DEPOSITION CONDITIONS; DIFFERENT MECHANISMS; DOPED ZNO; GA-DOPED ZNO; GLASS SUBSTRATES; GRAIN BOUNDARY SCATTERING; GRAIN SIZE; HIGH TEMPERATURE; IONIZED IMPURITY SCATTERING; OXIDIZING ENVIRONMENTS; RELATIVE HUMIDITIES; RESISTIVITY BEHAVIOR; THIN-FILM SOLAR CELLS; TRANSPARENT ELECTRODE;

ATMOSPHERIC HUMIDITY; BIOACTIVITY; CARRIER CONCENTRATION; CONDUCTIVE FILMS; DEPOSITION; GALLIUM; GALVANOMAGNETIC EFFECTS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL MOBILITY; MOISTURE; SOLAR CELLS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

FILM PREPARATION;

EID: 77954211459 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3455814 Document Type: Conference Paper

Times cited : (20)

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