Ga-doped zno transparent conductive film as substitution for ito common electrode in tft-lcds

Digest of Technical Papers - SID International Symposium

Volumn 40, Issue 1, 2009, Pages 1103-1106

  Makino, Hisao ^a   Yamamoto, Naoki ^a   Miyake, Aki ^a   Yamada, Takahiro ^a   Yamamoto, Tetsuya ^a   Iwaoka, Hiroaki ^b   Itoh, Takahiro ^b   Hirashima, Yoshinori ^b   Hokari, Hitoshi ^c   Yoshida, Motohiko ^c   Morita, Hidehiro ^c  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Geomatec Co Ltd   (Japan)

^c CASIO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUTOMOBILE MANUFACTURE; FILM PREPARATION; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; LIQUID CRYSTAL DISPLAYS; MAGNETRON SPUTTERING; THERMODYNAMIC STABILITY; THIN FILMS; TRANSPARENT ELECTRODES; ZINC OXIDE;

AS SUBSTITUTIONS; FIELD TEST; GA-DOPED ZNO; GADOPED ZNO (GZO); ION PLATING; POST-ANNEALING TEMPERATURE; THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAYS; TRANSPARENT CONDUCTIVE FILMS;

THIN FILM TRANSISTORS;

EID: 78649726332     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1889/1.3256477     Document Type: Conference Paper

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