Optical dielectric constant inhomogeneity along the growth axis in ZnO-based transparent electrodes deposited on glass substrates

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Ikegami, Keiichi ^a   Yoshiyama, Takashi ^a   Maejima, Keigou ^a   Shibata, Hajime ^a   Tampo, Hitoshi ^a   Niki, Shigeru ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SCATTERING; CRYSTALLINITY; FILM DEPOSITION; FREQUENCY DEPENDENCE; GLASS SUBSTRATES; GLASS SYSTEMS; GROWTH AXIS; HEAVILY DOPED; HIGH TRANSPARENCY; INFRARED FREQUENCIES; INHOMOGENEITY; INITIAL STAGES; OPTICAL DIELECTRIC CONSTANT; OPTICAL MEASUREMENT; TRANSPARENT ELECTRODE; VISIBLE LIGHT; ZNO;

CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; DOPING (ADDITIVES); GALLIUM; OPTICAL DATA PROCESSING; PERMITTIVITY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; TRANSPARENCY; ZINC OXIDE;

GLASS;

EID: 67249151488     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3108539     Document Type: Article

References (19)

1. Mineral Commodity Summaries (U.S. Geological Survey, Washington, 2008), pp. 80-81.; also available at http://minerals.usgs.gov/minerals/pubs/mcs/2008/ mcs2008.pdf.
2. F. P. Castronovo, Jr. and H. N. Wanger, Jr., J. Nucl. Med. 0161-5505 14, 677 (1973).
3. T. Yamamoto, T. Yamada, A. Miyake, H. Makino, and N. Yamamoto, J. Soc. Inf. Disp. 1071-0922 10.1889/1.2953477 16, 713 (2008).
4. T. Minami, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/20/4/004 20, S35 (2005).
5. Ü. Özgür, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doǧan, V. Avrutin, S. -J. Cho, and H. Morko̧, J. Appl. Phys. 0021-8979 10.1063/1.1992666 98, 041301 (2005).
6. Z. -C. Jin, I. Hambarg, and C. G. Granqvist, J. Appl. Phys. 0021-8979 10.1063/1.342419 64, 5117 (1988).
7. H. Y. Fan, W. Spitzer, and R. J. Collins, Phys. Rev. 101, 566 (1956). 10.1103/PhysRev.101.566
8. I. Hamberg and C. G. Granqvist, J. Appl. Phys. 0021-8979 10.1063/1.337534 60, R123 (1986).
9. Z. Qiao, C. Agashe, and D. Mergel, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.08.282 496, 520 (2006).
10. J. Steinhauser, S. Fa, N. Oliveria, E. Vallat-Sauvain, and C. Ballif, Appl. Phys. Lett. 0003-6951 10.1063/1.2719158 90, 142107 (2007).
11. G. Burns, Solid State Physics (Tokai University Press, Tokyo, 1991), Vol. 3, pp. 11-14
12. K. Kudo, Basic Physics of Optical Properties, 2nd ed. (Ohm Co., Tokyo, 1990), pp. 68-84
13. K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, S. Sjirakata, K. Matsubara, H. Tampo, K. Sakurai, S. Ishizuka, and S. Niki, Thin Solid Films 0040-6090 480-481, 199 (2005). 10.1016/j.tsf.2004.11.072
14. Y. Imanaka, M. Oshikiri, K. Takehana, T. Takamasu, and G. Kido, Physica B 0921-4526 10.1016/S0921-4526(01)00304-0 298, 211 (2001).
15. See EPAPS Document No. E-JAPIAU-105-117907. In the UV region, where the role of the free carriers is no longer important and then the difference between the lower and major portions of the GZO film is negligible, the observed difference in the reflectance simply reflects the difference between the refractive indexes of air and glass. For more information on EPAPS, see http://www.aip.org/pubservs/epaps.html.
16. K. Ikegami, Thin Solid Films 0040-6090 10.1016/j.tsf.2004.12.060 483, 312 (2005).
17. The formulae given in Ref. were deduced for a three-layer system that bears thin films on both sides of a thick substrate, but modifying them applicable to a two-layer system is straightforward.
18. S. Brehme, F. Fenske, W. Fuhs, E. Nebauer, M. Poschenrieder, B. Selle, and I. Sieber, Thin Solid Films 0040-6090 10.1016/S0040-6090(98)01490-4 342, 167 (1999).
19. T. Minami, T. Miyata, Y. Ohtani, and T. Kuboi, Phys. Status Solidi (RRL) 1862-6254 1, R31 (2007). 10.1002/pssr.200600009