Epitaxial synthesis of GaN/Ga2O3 core/shell nanocable heterostructures by atmosphere control

Acta Materialia

Volumn 58, Issue 14, 2010, Pages 4714-4722

  Lee, Sanghun ^a   Ham, Moon Ho ^b   Myoung, Jae Min ^b   Lee, Woong ^a  

^a Changwon National University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Chemical vapor deposition; Compound semiconductor; Core shell nanoheterostructure; Nanostructure

Indexed keywords

ATMOSPHERE CONTROLS; COMPOUND SEMICONDUCTORS; CORE/SHELL; CORE/SHELL NANOHETEROSTRUCTURE; CRYSTALLINE QUALITY; ELECTRONIC DEVICE; EPITAXIAL SYNTHESIS; GAN NANOWIRES; GAN POWDERS; HETEROEPITAXIAL; HEXAGONAL GAN; NANO-HETEROSTRUCTURES; NANOCABLE HETEROSTRUCTURES; NANOCABLES; NANOSCALED; NOVEL METHODS; OXIDIZING AGENTS; RADIAL DIRECTION; REACTION AGENTS; SHARP INTERFACE; SINGLE-CRYSTALLINE; SMOOTH SURFACE; THERMAL OXIDATION PROCESS;

CHEMICAL VAPOR DEPOSITION; COMPLEXATION; CRYSTALLINE MATERIALS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; NANOWIRES; OXIDATION; SYNTHESIS (CHEMICAL);

THERMAL EVAPORATION;

EID: 77954089814     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2010.05.006     Document Type: Article

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