Fabrication of microstructured silicon (μs-Si) from a bulk Si wafer and its use in the printing of high-performance thin-film transistors on plastic substrates

Journal of Micromechanics and Microengineering

Volumn 20, Issue 7, 2010, Pages

  Lee, Keon Jae ^a   Ahn, Heejoon ^b   Motala, Michael J ^c,d   Nuzzo, Ralph G ^c,d   Menard, Etienne ^e   Rogers, John A ^c,d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^d United States of America   (United States)

^e Semprius   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING STRAIN; DESCRIPTIVE MODEL; DEVICE INTERFACES; DIRECT INTEGRATION; FABRICATION ROUTES; FINITE ELEMENT SIMULATIONS; HIGH QUALITY; LAMINATION PROCESS; PLASTIC SUBSTRATES; PROCESS INNOVATION; SI WAFER; SILICON DIOXIDE; SINGLE CRYSTALLINE SILICON; STRAIN DISTRIBUTIONS; TOP-GATE;

COMPUTER SIMULATION; FABRICATION; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; GATE DIELECTRICS; GATES (TRANSISTOR); LAMINATING; MECHANICAL STABILITY; SEMICONDUCTING SILICON; SILICA; SILICON OXIDES; SILICON WAFERS; STRAIN; THIN FILM TRANSISTORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77953957560     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/7/075018     Document Type: Article

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