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1
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25144453560
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Displays and microelectronics on polymer substrates
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July
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N.D. Young, D.J. Mcculoch, and R.M. Bunn, "Displays and microelectronics on polymer substrates," Digest of Technical Papers on AM-LCD, pp.47-50, July 1997.
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(1997)
Digest of Technical Papers on AM-LCD
, pp. 47-50
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Young, N.D.1
Mcculoch, D.J.2
Bunn, R.M.3
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2
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0033734517
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High mobility thin film transistors fabricated on plastic substrate at a processing temperature of 110°C
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March
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D.P. Gosain, T. Noguchi, and S. Usui, "High mobility thin film transistors fabricated on plastic substrate at a processing temperature of 110°C," Jpn. J. Appl. Phys. 2, Lett., vol.39, no.3A/B, pp.L179-L181, March 2000.
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(2000)
Jpn. J. Appl. Phys. 2, Lett.
, vol.39
, Issue.3 A-B
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Gosain, D.P.1
Noguchi, T.2
Usui, S.3
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3
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0036683875
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Surface-free technology by laser annealing (SUFTLA) and its application to poly-Si TFT-LCDs on plastic film with integrated drivers
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Aug.
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S. Inoue, S. Utsunomiya, T. Saeki, and T. Shimoda, "Surface-free technology by laser annealing (SUFTLA) and its application to poly-Si TFT-LCDs on plastic film with integrated drivers," IEEE Trans. Electron Devices, vol.49, no.8, pp.1353-1360, Aug. 2002.
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(2002)
IEEE Trans. Electron Devices
, vol.49
, Issue.8
, pp. 1353-1360
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Inoue, S.1
Utsunomiya, S.2
Saeki, T.3
Shimoda, T.4
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4
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0012069756
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Low-temperature polycrystalline-silicon TFT color LCD panel made of plastic substrates
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May
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A. Asano and T. Kinoshita, "Low-temperature polycrystalline-silicon TFT color LCD panel made of plastic substrates," SID 02 Digest, pp.1196-1199, May 2002.
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(2002)
SID 02 Digest
, pp. 1196-1199
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Asano, A.1
Kinoshita, T.2
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5
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33744463930
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Surface free technology by laser ablation/annealing
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July
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S. Utsunomiya, T. Saeki, S. Inoue, and T. Shimoda, "Surface free technology by laser ablation/annealing," Digest of Technical Papers on AM-LCD, pp.37-40, July 2002.
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(2002)
Digest of Technical Papers on AM-LCD
, pp. 37-40
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Utsunomiya, S.1
Saeki, T.2
Inoue, S.3
Shimoda, T.4
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6
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0842288276
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Poly-Si TFT fabricated at 150°C using ICP-CVD and excimer laser annealing for plastic substrates
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Dec.
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M.C. Lee, S.M. Man, S.H. Kang, M.Y. Shin, and M.K. Han, "Poly-Si TFT fabricated at 150°C using ICP-CVD and excimer laser annealing for plastic substrates," Technical Digest of IEDM 2003, pp.215-218, Dec. 2003.
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(2003)
Technical Digest of IEDM 2003
, pp. 215-218
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Lee, M.C.1
Man, S.M.2
Kang, S.H.3
Shin, M.Y.4
Han, M.K.5
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7
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0031211727
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Self-aligned aluminum top-gate polysilicon thin-film transistors fabricated using laser recrystallization and gas-immersion laser doping
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Aug.
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G.K. Giust and T.W. Sigmon, "Self-aligned aluminum top-gate polysilicon thin-film transistors fabricated using laser recrystallization and gas-immersion laser doping," IEEE Electron Device Lett., vol.18, no 8, pp.394-396, Aug. 1997.
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(1997)
IEEE Electron Device Lett.
, vol.18
, Issue.8
, pp. 394-396
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Giust, G.K.1
Sigmon, T.W.2
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8
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0003949512
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Fabrication of high-mobility poly-Si TFTs on flexible stainless-steel substrates
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July
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F. Omata and T. Serikawa, "Fabrication of high-mobility poly-Si TFTs on flexible stainless-steel substrates," Digest of Technical Papers on AM-LCD, pp.243-246, July 1999.
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(1999)
Digest of Technical Papers on AM-LCD
, pp. 243-246
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Omata, F.1
Serikawa, T.2
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9
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0033686307
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High-mobility poly-Si thin film transistors fabricated on stainless-steel foils by low temperature processes using sputter-depositions
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May
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T. Serikawa and F. Omata, "High-mobility poly-Si thin film transistors fabricated on stainless-steel foils by low temperature processes using sputter-depositions," Jpn. J. Appl. Phys. 2, Lett., vol.39, no.5A, pp.L393-L395, May 2000.
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(2000)
Jpn. J. Appl. Phys. 2, Lett.
, vol.39
, Issue.5 A
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Serikawa, T.1
Omata, F.2
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10
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0011224380
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Excimer laser crystallization and doping of a-Si films sputtered below 100°C
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July
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D.P. Gosain, J. Westwater, and S. Usui, "Excimer laser crystallization and doping of a-Si films sputtered below 100°C," Digest of Technical Papers on AM-LCD, pp.51-54, July 1997.
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(1997)
Digest of Technical Papers on AM-LCD
, pp. 51-54
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Gosain, D.P.1
Westwater, J.2
Usui, S.3
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11
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85027155583
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The effect of thermal annealing on sputtered a-Si film
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To be published
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D.Y. Kim, H.S. Cho, K.B. Park, J.Y. Kwon, J.S. Jung, and T. Noguchi, "The effect of thermal annealing on sputtered a-Si film," J. Korean Phys. Soc., To be published.
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J. Korean Phys. Soc.
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Kim, D.Y.1
Cho, H.S.2
Park, K.B.3
Kwon, J.Y.4
Jung, J.S.5
Noguchi, T.6
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12
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33645568924
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Crystallization behavior of a-Si film using UV pulsed laser
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July
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D.Y. Kim, K.B. Park, J.Y. Kwon, J.S. Jung, W.X. Xianyu, Y.S. Park, and T. Noguchi, "Crystallization behavior of a-Si film using UV pulsed laser," International Meeting on Information Display'03 Digest, pp.656-660, July 2003.
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(2003)
International Meeting on Information Display'03 Digest
, pp. 656-660
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Kim, D.Y.1
Park, K.B.2
Kwon, J.Y.3
Jung, J.S.4
Xianyu, W.X.5
Park, Y.S.6
Noguchi, T.7
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13
-
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85027134234
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2 film formed by inductively coupled plasma chemical vapor deposition at low temperature for poly-Si TFT
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To be published
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2 film formed by inductively coupled plasma chemical vapor deposition at low temperature for poly-Si TFT," J. Korean Phys. Soc., To be published.
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J. Korean Phys. Soc.
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Jung, J.S.1
Kwon, J.Y.2
Park, Y.S.3
Cho, H.S.4
Park, K.B.5
Huaxiang, Y.X.6
Xianyu, W.X.7
Noguchi, T.8
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