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Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 327-331

MBE grown AlGaN/GaN MODFETs with high breakdown voltage

(8) Vescan, A a Dietrich, R a Wieszt, A a Tobler, H a Leier, H a Van Hove, J M b Chow, P P b Wowchak, A M b

a DAIMLER AG (Germany)

b SVT ASSOCIATES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0032643183 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)01341-4 Document Type: Article

Times cited : (12)

References (10)

1
- 85031621073
- Charlottesville, VA, June 22-24
- S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, L.T. Kehias, T.J. Jenkins, 56th Annual Device Research Conf. Digest, Charlottesville, VA, June 22-24, 1998.
- (1998) 56th Annual Device Research Conf. Digest
- Sheppard, S.T.¹ Doverspike, K.² Pribble, W.L.³ Allen, S.T.⁴ Palmour, J.W.⁵ Kehias, L.T.⁶ Jenkins, T.J.⁷

2
- 85031632915
- April 13-17, San Francisco, California, to be published
- L.F. Eastman et al., Materials Research Society Symp. Proc., April 13-17, San Francisco, California, 1998, to be published.
- (1998) Materials Research Society Symp. Proc.
- Eastman, L.F.¹

3
- 0031223714
- Wu Y.-F., Keller B.P., Fini P., Pusl J., Le M., Nguyen N.X., Nguyen C., Widman D., Keller S., Denbaars S.P., Mishra U.K. Electron. Lett. 33(20):1997;1742.
- (1997) Electron. Lett. , vol.33 , Issue.20 , pp. 1742
- Wu, Y.-F.¹ Keller, B.P.² Fini, P.³ Pusl, J.⁴ Le, M.⁵ Nguyen, N.X.⁶ Nguyen, C.⁷ Widman, D.⁸ Keller, S.⁹ Denbaars, S.P.¹⁰ Mishra, U.K.¹¹

4
- 0032484855
- Nguyen C., Nguyen N.X., Le M., Grider D.E. Electron. Lett. 34(3):1998;309.
- (1998) Electron. Lett. , vol.34 , Issue.3 , pp. 309
- Nguyen, C.¹ Nguyen, N.X.² Le, M.³ Grider, D.E.⁴

5
- 0031116883
- Fan Z., Lu C., Botchkarev A.E., Tang H., Salvador A., Aktas Ö., Kim W., Morkoc H. Electron. Lett. 33(9):1997;814.
- (1997) Electron. Lett. , vol.33 , Issue.9 , pp. 814
- Fan, Z.¹ Lu, C.² Botchkarev, A.E.³ Tang, H.⁴ Salvador, A.⁵ Aktas, Ö.⁶ Kim, W.⁷ Morkoc, H.⁸

6
- 0029309760
- Van Hove J.M., Cosimini G.J., Nelson E., Wowchak A.M., Chow P.P. J. Crystal Growth. 150:1995;908.
- (1995) J. Crystal Growth , vol.150 , pp. 908
- Van Hove, J.M.¹ Cosimini, G.J.² Nelson, E.³ Wowchak, A.M.⁴ Chow, P.P.⁵

7
- 0001719141
- Van Hove J.M., Chow P.P., Wowchak A.M., Klaassen J.J., Hickman II R., Polley C. J. Vac. Sci. Technol. B. 16(3):1998;1286.
- (1998) J. Vac. Sci. Technol. B , vol.16 , Issue.3 , pp. 1286
- Van Hove, J.M.¹ Chow, P.P.² Wowchak, A.M.³ Klaassen, J.J.⁴ Hickman R. II⁵ Polley, C.⁶

8
- 0031143373
- Van Hove J.M., Chow P.P., Wowchak A.M., Klaassen J.J., Rosamond M.F., Croswell D.R. J. Crystal Growth. 175/176:1997;79.
- (1997) J. Crystal Growth , vol.175-176 , pp. 79
- Van Hove, J.M.¹ Chow, P.P.² Wowchak, A.M.³ Klaassen, J.J.⁴ Rosamond, M.F.⁵ Croswell, D.R.⁶

9
- 36449003860
- Fan Z., Mohammad S.N., Kim W., Aktas Ö., Botchkarev A.E., Morkoc H. Appl. Phys. Lett. 68(12):1996;1672.
- (1996) Appl. Phys. Lett. , vol.68 , Issue.12 , pp. 1672
- Fan, Z.¹ Mohammad, S.N.² Kim, W.³ Aktas, Ö.⁴ Botchkarev, A.E.⁵ Morkoc, H.⁶

10
- 0031551186
- Gaska R., Chen Q., Yang J., Khan M.A., Shur M.S., Ping A., Adesida I. Electron. Lett. 33(14):1997;1255.
- (1997) Electron. Lett. , vol.33 , Issue.14 , pp. 1255
- Gaska, R.¹ Chen, Q.² Yang, J.³ Khan, M.A.⁴ Shur, M.S.⁵ Ping, A.⁶ Adesida, I.⁷

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