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Volumn 13, Issue 1, 2003, Pages 62-73

Novel technique for estimating metal semiconductor field effect transistor parasitics

Author keywords

Characterization; Extrinsic parasitics; MES field effect transistor; Modeling; Optimization

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; INDUCTANCE; OPTIMIZATION; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS;

EID: 0037234573     PISSN: 10964290     EISSN: None     Source Type: Journal    
DOI: 10.1002/mmce.10063     Document Type: Article
Times cited : (6)

References (8)
  • 2
    • 0012576217 scopus 로고    scopus 로고
    • Systematic optimization technique for MESFET modeling
    • Ph.D. dissertation, Virginia Polytechnical Institute and State University
    • Y.A. Kahlaf, Systematic optimization technique for MESFET modeling, Ph.D. dissertation, Virginia Polytechnical Institute and State University, 2000.
    • (2000)
    • Kahlaf, Y.A.1
  • 3
    • 0018442981 scopus 로고
    • Determination of the basic device parameters of a GaAs MESFET
    • H. Fukui, Determination of the basic device parameters of a GaAs MESFET, Bell Syst Tech J 58 (1979), 771-795.
    • (1979) Bell Syst Tech J , vol.58 , pp. 771-795
    • Fukui, H.1
  • 6
    • 0028467823 scopus 로고
    • FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-a new concept
    • F. Lin and G. Kompa, FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search-A new concept, IEEE Trans Microwave Theory Tech 42 (1994), 1114-1121.
    • (1994) IEEE Trans Microwave Theory Tech , vol.42 , pp. 1114-1121
    • Lin, F.1    Kompa, G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.