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Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

Transport and charging mechanisms in Ta2O5 thin films for capacitive RF MEMS switches application

(6) Persano, A a Quaranta, F a Martucci, M C a Creti P a Siciliano, P a Cola, A a

a CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE TRANSIENT; CAPACITIVE RF MEMS SWITCH; CHARGING EFFECT; CHARGING MECHANISM; CONDUCTION MECHANISM; DIELECTRIC LAYER; DIELECTRICAL PROPERTIES; EMISSION PROCESS; EXPONENTIAL LAW; HIGH BREAKDOWN FIELDS; HIGH DIELECTRIC CONSTANTS; HIGHER TEMPERATURES; LOW-LEAKAGE CURRENT; NEAREST-NEIGHBORS; POOLE-FRENKEL; RADIO FREQUENCY MICROELECTROMECHANICAL SYSTEMS; TEMPERATURE RANGE; TRANSPORT MECHANISM; VARIABLE-RANGE HOPPING;

ELECTRIC FIELDS; MEMS; MICROELECTROMECHANICAL DEVICES; TANTALUM; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 77953645936 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3407542 Document Type: Article

Times cited : (21)

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