Modeling of reverse current behavior in amorphous thin and thick p-i-n diodes

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2238-2240

  Cerdeira, Antonio ^a   Estrada, Magali ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; APPROXIMATION THEORY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD MEASUREMENT; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; THICK FILM DEVICES; THIN FILM DEVICES; VOLTAGE MEASUREMENT;

AMORPHOUS DIODES; EXPONENTIAL VOLTAGE; INTRINSIC LAYER; POOLE-FRENKEL EMISSION FACTORS; REVERSE CURRENT;

SEMICONDUCTOR DEVICE TESTING;

EID: 0034316643     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877190     Document Type: Article

References (4)

1. Y.-T. Tsai, K.-D. Hong, and Y.-L. Yuan, An efficient analytical model for calculating trapped charge in amorphous silicon, IEEE Trans. Computer-Aided Design, vol. 13, pp. 725-728, June 1994.
2. N. Kramer and C. Van Berkel, Reverse current mechanisms in amorphous silicon diodes, Appl. Phys. Lett., vol. 64, pp. 1129-1131, 1994.
3. S. Qureshi et al, Signal generation in a hydrogenated amorphous silicon detector, IEEE Trans. Nucl. Sci., vol. 36, pp. 194-198, 1989.
4. R. M. Hill, Poole-Frenkel conduction in amorphous solids, Philos. Mag., vol. 23, pp. 59-86, 1971.