Reduced metal contamination in atomic-layer-deposited HfO2 films grown on Si using O3 oxidant generated without N2 assistance

Electrochemical and Solid-State Letters

Volumn 13, Issue 8, 2010, Pages

  Park, Tae Joo ^a   Chung, Keum Jee ^a,b   Kim, Hyun Chul ^a   Ahn, Jinho ^b   Wallace, Robert M ^a   Kim, Jiyoung ^a  

^a The University of Texas at Dallas   (United States)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CONSTANT VOLTAGE STRESS; DIELECTRIC BREAKDOWNS; ELECTRICAL PROPERTY; METAL CONTAMINATION; METAL IMPURITIES; PHYSICAL DENSITY; SI CONCENTRATION;

CHROMIUM; DIELECTRIC PROPERTIES; OZONE;

HAFNIUM COMPOUNDS;

EID: 77953581332     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3430657     Document Type: Article

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