Carbon nanotube transistors with graphene oxide films as gate dielectrics

Science China: Physics, Mechanics and Astronomy

Volumn 53, Issue 5, 2010, Pages 828-833

  Fu, Wang Yang ^a   Liu, Lei ^a   Wang, Wen Long ^a   Wu, Mu Hong ^a   Xu, Zhi ^a   Bai, Xue Dong ^a   Wang, En Ge ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Carbon based nanoelectronics; Gate dielectrics; Graphene oxide

Indexed keywords

AMBIENT CONDITIONS; CARBON NANOMATERIALS; CARBON NANOTUBE TRANSISTORS; CARBON-BASED NANOELECTRONICS; ESSENTIAL COMPONENT; GRAPHITE OXIDE; HIGH CARRIER MOBILITY; OPERATION VOLTAGE; PROOF OF PRINCIPLES; SILICON DIOXIDE; SILICON MICROELECTRONICS; TRANSISTOR CHARACTERISTICS;

CARBON FILMS; CARBON NANOTUBES; CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GRAPHENE; GRAPHITE; MICROELECTRONIC PROCESSING; MICROELECTRONICS; NANOELECTRONICS; OXIDE FILMS; SILICA; SILICON OXIDES;

GATE DIELECTRICS;

EID: 77953149726     PISSN: 16747348     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11433-010-0179-x     Document Type: Article

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