Influence of laser wavelength and beam profile on Nd3+:YAG laser assisted formation of polycrystalline-Si films

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4183-4190

  Palani, I A ^a   Vasa, N J ^a   Singaperumal, M ^a   Okada, T ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

Amorphous Si; Crystallization; Flat top laser beam; Laser annealing; Polycrystalline Si

Indexed keywords

1064 NM; BEAM PROFILES; CRYSTALLINE SI; FLAT-TOP; FLUENCES; FUNDAMENTAL WAVELENGTH; GAUSSIAN INTENSITY DISTRIBUTION; INTENSITY DISTRIBUTION; LASER ANNEALING; LASER FLUENCES; LASER TREATMENT; LASER WAVELENGTH; MEASUREMENT TECHNIQUES; POLY-SI; POLY-SI FILMS; POLYCRYSTALLINE; POLYCRYSTALLINE-SI; PROCESS WINDOW; SCANNING ELECTRON MICROSCOPE; SECOND HARMONICS; THEORETICAL SIMULATION; THERMAL MODELING; THIRD HARMONIC; YAG LASER; YAG LASER BEAMS;

AMORPHOUS FILMS; CRYSTALLIZATION; GAUSSIAN BEAMS; GLASS LASERS; LASER BEAMS; NEODYMIUM; POLYSILICON; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; THIN FILMS;

AMORPHOUS SILICON;

EID: 77953142901     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.12.003     Document Type: Article

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