Crystallization and ablation in annealing of amorphous-Si thin film on glass and crystalline-Si substrates irradiated by third harmonics of Nd3+:YAG laser

Materials Science in Semiconductor Processing

Volumn 11, Issue 4, 2008, Pages 107-116

  Palani, I A ^a   Vasa, Nilesh J ^a   Singaperumal, M ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

a Si on c Si; a Si on glass; Laser ablation; Laser annealing; Nd3+:YAG laser assisted annealing; Thin film crystallization

Indexed keywords

A-SI ON C-SI; A-SI ON GLASS; LASER ANNEALING; ND3+:YAG-LASER-ASSISTED ANNEALING; THIN-FILM CRYSTALLIZATION;

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CRYSTALLINE MATERIALS; CRYSTALLIZATION; ELECTRONIC PROPERTIES; FILM THICKNESS; GLASS; LASER ABLATION; LASER APPLICATIONS; LASERS; NEODYMIUM; NEODYMIUM LASERS; PULSED LASER DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILM DEVICES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67650552431     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.05.001     Document Type: Article

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