Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition

Optics Express

Volumn 18, Issue 11, 2010, Pages 11192-11201

  Briggs, Ryan M ^a   Pryce, Imogen M ^a   Atwater, Harry A ^a,b  

^a California Institute of Technology   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDPASS FILTERS; COMPUTATIONAL GEOMETRY; DEPOSITION; ELECTRIC LOSSES; LIGHT MODULATORS; METAL INSULATOR BOUNDARIES; MODULATION; PHOTONIC DEVICES; PULSED LASER DEPOSITION; PULSED LASERS; RESONATORS; SEMICONDUCTING SILICON COMPOUNDS; VANADIUM; WAVEGUIDES;

1550 NM; ACTIVE DEVICES; COMPUTATIONAL STUDIES; DEVICE GEOMETRIES; DEVICE STRUCTURES; IN-LINE; METAL-INSULATOR PHASE TRANSITION; METALLIC PHASE; MODULATION DEPTH; OPTICAL MODULATION; PHOTONIC CIRCUITS; PHOTONIC WAVEGUIDES; RESONATOR QUALITY; RING RESONATOR; SILICON ON INSULATOR; SILICON PHOTONICS; SINGLE MODE WAVEGUIDES; SPECTRAL RESPONSE; TRANSVERSE ELECTRIC MODES; VANADIUM DIOXIDE;

METAL INSULATOR TRANSITION;

METAL; VANADIUM DERIVATIVE; VANADIUM PENTOXIDE;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; ELECTRODE; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; PHASE TRANSITION; REFRACTOMETRY; SYSTEM ANALYSIS; TELECOMMUNICATION;

COMPUTER-AIDED DESIGN; ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; METALS; PHASE TRANSITION; REFRACTOMETRY; SYSTEMS INTEGRATION; TELECOMMUNICATIONS; VANADIUM COMPOUNDS;

EID: 77952850599     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.011192     Document Type: Article

References (23)

1. F. J. Morin, "Oxides which show a metal-to-insulator transition at the Neel temperature," Phys. Rev. Lett. 3(1), 34-36 (1959).
2. 2," J. Solid State Chem. 3(4), 490-500 (1971).
3. 2 during an ultrafast solid-solid phase transition," Phys. Rev. Lett. 87(23), 237401 (2001).
4. 2) as evidence of the Mott transition: coherent phonon analysis," Phys. Rev. Lett. 97(26), 266401 (2006).
5. 2 thin films induced by a switching voltage pulse," Physica B 369(1-4), 76-80 (2005).
6. C. Ko, and S. Ramanathan, "Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry," Appl. Phys. Lett. 93(25), 252101 (2008).
7. 2 micro-optical switch," Opt. Quantum Electron. 35(15), 1351-1355 (2003).
8. L Jiang, and W. N. Carr, "Design, fabrication and testing of a micromachined thermo-optical light modulator based on a vanadium dioxide array," J. Micromech. Microeng. 14(7), 833-840 (2004).
9. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometre-scale silicon electro-optic modulator," Nature 435(7040), 325-327 (2005).
10. A. Liu, R. Jones, L liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, "A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor," Nature 427(6975), 615-618 (2004).
11. E. L Wooten, K. M. Kissa, A. Yi-Yan, E. J. Murphy, D. A. Lafaw, P. F. Hallemeier, D. Maack, D. V. Attanasio, D. J. Fritz, G. J. McBrien, and D. E. Bossi, "A review of lithium niobate modulators for fiber-optic communications system," IEEE J. Sel. Top. Quantum Electron. 6(1), 69-82 (2000).
12. T. Ido, S. Tanaka, M. Suzuki, M. Koizumi, H. Sano, and H. Inoue, "Ultra-high-speed multiple-quantum-well electro-absorption optical modulators with integrated waveguides," J. Lightwave Technol. 14(9), 2026-2034 (1996).
13. 2 devices: electric field versus thermal effects," J. Mater. Sci. 44(19), 5345-5353 (2009).
14. 2," J. Phys. Condens. Matter 12(41), 8837-8845 (2000).
15. M. A. Webster, R. M. Pafchek, A. Mitchell, and T. L Koch, "Width dependence of inherent TM-mode lateral leakage loss in silicon-on-insulator ridge waveguides," IEEE Photon. Technol. Lett. 19(6), 429-431 (2007).
16. R. M. Briggs, M. Shearn, A. Scherer, and H. A. Atwater, "Wafer-bonded single-crystal silicon slot waveguides and ring resonators," Appl. Phys. Lett. 94(2), 021106 (2009).
17. 2 nanoparticles and thin films," J. Appl. Phys. 96(2), 1209-1213 (2004).
18. L. J. van der Pauw, "A new method of measuring the resistivity and Hall coefficients on lamellae of arbitrary shape," Philips Tech. Rev. 20, 220-224 (1958).
19. K. Preston, and M. Lipson, "Slot waveguides with polycrystalline silicon for electrical injection," Opt. Express 17(3), 1527-1534 (2009).
20. R. A. Soref, and B. R. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. 23(1), 123-129 (1987).
21. M. Borselli, T. J. Johnson, and O. Painter, "Beyond the Rayleigh scattering limit in high-Q silicon microdisks: theory and experiment," Opt. Express 13(5), 1515-1522 (2005).
22. J. A. McCaulley, V. M. Donnelly, M. Vernon, and I. Taha, "Temperature dependence of the near-infrared refractive index of silicon gallium arsenide, and indium phosphide," Phys. Rev. B 49(11), 7408-7417 (1994).
23. 2 film near the metal-insulator transition," Phys. Rev. B 54(7), 4621-4628 (1996).