Transient electrothermal analysis of multilevel interconnects in the presence of ESD pulses using the nonlinear time-domain finite-element method

IEEE Transactions on Electromagnetic Compatibility

Volumn 51, Issue 3 PART 2, 2009, Pages 774-783

  Shi, Yan Bing ^a   Yin, Wen Yan ^a   Mao, Jun Fa ^a   Liu, Peiguo ^b   Liu, Qing Huo ^c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^c Duke University   (United States)

Author keywords

Electrostatic discharges (ESDs); Electrothermal effects; Finite element method (FEM); Interconnects; Time domain analysis

Indexed keywords

32-NM NODE; 4-LEVEL; ADVANCED CMOS; APPROXIMATE FACTORIZATION; COMPUTATION EFFICIENCY; CONJUGATED GRADIENT; ELECTROTHERMAL ANALYSIS; ELECTROTHERMAL EFFECTS; ELEMENT BY ELEMENTS; FINITE-ELEMENT METHOD (FEM); INTERCONNECT STRUCTURES; INTERCONNECTS; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; MATERIAL PARAMETER; MAXIMUM TEMPERATURE; MEMORY COST; MULTI LEVEL INTERCONNECTS; NONLINEAR MATERIALS; SPARSE MATRICES; TEMPERATURE DEPENDENT; TEMPERATURE RISE; TIME-DOMAIN FINITE ELEMENT METHODS; TRANSIENT TEMPERATURE DISTRIBUTIONS; WAVE FORMS;

ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; FINITE ELEMENT METHOD; LASER OPTICS; METHOD OF MOMENTS; NONLINEAR ANALYSIS; TECHNOLOGICAL FORECASTING; THERMAL CONDUCTIVITY;

TIME DOMAIN ANALYSIS;

EID: 69549120007     PISSN: 00189375     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEMC.2009.2017026     Document Type: Article

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