Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy/p-Si HBTs

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 425-432

  Singh, Dinkar V ^a,b   Hoyt, Judy L ^a,c   Gibbons, James F ^a  

^a STANFORD UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Bipolar; Heterojunction; Heterostructure; Pnp; Si licon carbon alloy; Si1 yCy

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; ENERGY GAP; SEMICONDUCTOR DOPING; SILICON ALLOYS; THERMAL EFFECTS;

BAND OFFSETS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0038732767     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.808452     Document Type: Article

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