Chemical vapor deposition of α-boron layers on silicon for controlled nanometer-deep p + n junction formation

Journal of Electronic Materials

Volumn 39, Issue 2, 2010, Pages 162-173

  Sarubbi, Francesco ^a   Scholtes, Tom L M ^a   Nanver, Lis K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Boron (B); Chemical vapor deposition (CVD); Diborane (B 2H 6); Silicon doping; Ultrashallow junctions

Indexed keywords

AMORPHOUS BORON; ANALYTICAL TECHNIQUES; BORON-LAYERS; DIBORANE; ELECTRICAL CHARACTERIZATION; EXPOSURE CONDITIONS; GROWTH MECHANISMS; HIGH QUALITY; HIGH SELECTIVITY; JUNCTION FORMATION; LAYER THICKNESS; P-N JUNCTION; PROCESSING PARAMETERS; REDUCED PRESSURE; SATURATION CURRENT; SCHOTTKY; SI DEVICES; SILICON DOPING; SILICON SUBSTRATES; SPATIAL HOMOGENEITY; TEM; ULTRA SHALLOW JUNCTION; ULTRASHALLOW JUNCTIONS;

AMORPHOUS SILICON; BORON; BORON COMPOUNDS; FABRICATION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL VAPOR DEPOSITION;

EID: 77951255988     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-1018-6     Document Type: Article

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