Dynamics of metastable defects in a-Si:H/SiN TFTs

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 122-124

  Merticaru, A R ^a   Mouthaan, A J ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEGRADATION; INTERFACES (MATERIALS); REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; STRESS RELAXATION;

INTERFACE STATE CREATION; METASTABLE DEFECTS;

THIN FILM TRANSISTORS;

EID: 0035246770     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01796-X     Document Type: Article

References (4)

1. Powell M.J. IEEE Trans. El. Dev. 36:(12):1989;2753-2763.
2. Stannowski B., Schropp R. Appl. Phys. Lett. 75:(23):1999;3674-3676.
3. Jackson W.B., Marshal J.M. Phys. Rev. B. 39:(2):1989;1164-1179.
4. F.R. Libsch, J. Kanicki, Jpn. Display (1992) 443-446.