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Volumn 49, Issue 3 PART 2, 2010, Pages

Electrical properties of yttrium-indium-zinc-oxide thin film transistors fabricated using the sol-gel process and various yttrium compositions

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTY; INDIUM ZINC OXIDES; ON/OFF RATIO; POST-ANNEALING TEMPERATURE; SATURATION MOBILITY; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; THERMOGRAVIMETRY;

EID: 77952578784     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.03CB01     Document Type: Article
Times cited : (18)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.