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Volumn , Issue , 2009, Pages

Numerical analysis of transport properties of boron-doped graphene FETs

Author keywords

[No Author keywords available]

Indexed keywords

ADVERSE EFFECT; ARMCHAIR GRAPHENE NANORIBBONS; ATOMIC SCALE; BORON-DOPED GRAPHENE; BORON-DOPING; DISPERSION RELATIONS; NANORIBBONS; NON-EQUILIBRIUM GREEN'S FUNCTION; NUMERICAL INVESTIGATIONS; TRANSPORT CHARACTERISTICS;

EID: 70350234813     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091130     Document Type: Conference Paper
Times cited : (8)

References (9)
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  • 3
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    • Son, Y.-W.1    Cohen, M.L.2    Louie, S.G.3
  • 4
    • 70350217074 scopus 로고    scopus 로고
    • Gaussian 03, M. J. Frisch et al., 2003.
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  • 5
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    • Hooke, R.1    Jeeves, T.A.2
  • 6
    • 34547293456 scopus 로고    scopus 로고
    • Electronic and Transport Properties of Boron-Doped Graphene Nanoribbons
    • T. B. Martins, R. H. Miwa, A. J. R. da Silva, and A. Fazzio, "Electronic and Transport Properties of Boron-Doped Graphene Nanoribbons," Phys. Rev. Lett., vol. 98, p. 196803, 2007.
    • (2007) Phys. Rev. Lett , vol.98 , pp. 196803
    • Martins, T.B.1    Miwa, R.H.2    da Silva, A.J.R.3    Fazzio, A.4
  • 7
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  • 8
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    • Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs
    • Y. Yoon, G. Fiori, S. Hong, J. Guo, and G. Iannaccone, "Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs," IEEE Trans. Electron Devices, vol. 55, pp. 2314-2323, 2008.
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    • G. Fiori, G. Iannaccone, and G. Klimeck, "A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry," IEEE Trans. Electron Devices, vol. 53, pp. 1782-1788, 2006.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.