Simulation study of graphene nanoribbon tunneling transistors including edge roughness effects

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 57-60

  Grassi, Roberto ^a   Gnudi, Antonio ^a   Reggiani, Susanna ^a   Gnani, Elena ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; EDGE ROUGHNESS; GRAPHENE NANO-RIBBON; KEY DESIGN PARAMETERS; NANORIBBON FETS; ON CURRENTS; ON/OFF CURRENT RATIO; REAL-SPACE; SIMULATION STUDIES; SPACE MODELS; TIGHT BINDING;

WIND TUNNELS;

TUNNELING (EXCAVATION);

EID: 67650679324     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897538     Document Type: Conference Paper

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