Characteristics of pulse plated ZnTe films

Journal of Materials Science: Materials in Electronics

Volumn 17, Issue 5, 2006, Pages 393-396

  Murali, K R ^a   Rajkumar, P Richards ^a  

^a CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRODEPOSITION; EMISSION SPECTROSCOPY; ENERGY GAP; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GLASS; STAINLESS STEEL; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

BAND GAP; OPTICAL TRANSMITTANCE SPECTROSCOPY; STOICHIOMETRIC FILM; ZINC TELLURIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 33745053216     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-7476-1     Document Type: Article

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