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Volumn 59, Issue 24, 1999, Pages 15789-15795

Quantum confinement effects on the electronic structure of si(001) ultrathin films: energy shifts of optical band edges and luminescence in crystalline and amorphous si films

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EID: 0001228164     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.15789     Document Type: Article
Times cited : (20)

References (27)
  • 3
    • 0029213836 scopus 로고
    • MRS Symposia Proceedings No. 358, D. A. Grützmacher, E. F. Steigmeier, H. Auderset, R. Morf, B. Delley, and R. Wessicken, ibid., p. 833; C. C. Tsai F. Koch R. W. Collins M. Hirose L. Brus Materials Research Society, Pittsburgh
    • R. Tsu, J. Morais, and A. Bowhill, in Microcrystalline and Nanocrystalline Semiconductors, edited by L. Brus, M. Hirose, R. W. Collins, F. Koch, and C. C. Tsai, MRS Symposia Proceedings No. 358 (Materials Research Society, Pittsburgh, 1995), p. 825;D. A. Grützmacher, E. F. Steigmeier, H. Auderset, R. Morf, B. Delley, and R. Wessicken, ibid., p. 833;
    • (1995) Microcrystalline and Nanocrystalline Semiconductors , pp. 825
    • Tsu, R.1    Morais, J.2    Bowhill, A.3
  • 17
    • 85037875126 scopus 로고    scopus 로고
    • Calculations have been performed for the Si-O-Si bond angle ranging from (Formula presented) to (Formula presented) and have found that main conclusions presented here are not changed at all.
    • Calculations have been performed for the Si-O-Si bond angle ranging from (Formula presented) to (Formula presented) and have found that main conclusions presented here are not changed at all.
  • 22
    • 0027206491 scopus 로고
    • No. 283 (Microcrystalline and Nanocrystalline Semiconductors, Materials Research Society L. Brus, M. Hirose, R. W. Collins, F. Koch, and C. C. Tsai
    • R. Tsu, L. Ioriatti, J. F. Harvey, H. Shen, and R. A. Lux, in Microcrystalline and Nanocrystalline Semiconductors, edited by L. Brus, M. Hirose, R. W. Collins, F. Koch, and C. C. Tsai, MRS Symposia Proceedings No. 283 (Materials Research Society, Pittsburgh, 1993), p. 437;
    • (1993) MRS Symposia Proceedings , pp. 437
    • Tsu, R.1    Ioriatti, L.2    Harvey, J.F.3    Shen, H.4    Lux, R.A.5
  • 23
    • 0003523588 scopus 로고
    • NATO Advanced Study Institute Series B: Physics, S. Ossicini L. T. Canham D. C. Bensahel Kluwer Academic Publishers, Dordrecht
    • R. Tsu and D. Babic, in Optical Properties of Low Dimensional Silicon Structures, edited by D. C. Bensahel, L. T. Canham, and S. Ossicini, NATO Advanced Study Institute Series B: Physics (Kluwer Academic Publishers, Dordrecht, 1993), p. 203.
    • (1993) Optical Properties of Low Dimensional Silicon Structures , pp. 203
    • Tsu, R.1    Babic, D.2
  • 27
    • 85037918254 scopus 로고    scopus 로고
    • The effective Bohr radius is (Formula presented) in bulk. The Bohr radius of a two-dimensional flat exciton (Formula presented) which is estimated to be 1.65 nm for the Si layers under study, using (Formula presented)
    • The effective Bohr radius is (Formula presented) in bulk. The Bohr radius of a two-dimensional flat exciton (Formula presented) which is estimated to be 1.65 nm for the Si layers under study, using (Formula presented)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.