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3
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0029213836
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MRS Symposia Proceedings No. 358, D. A. Grützmacher, E. F. Steigmeier, H. Auderset, R. Morf, B. Delley, and R. Wessicken, ibid., p. 833; C. C. Tsai F. Koch R. W. Collins M. Hirose L. Brus Materials Research Society, Pittsburgh
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R. Tsu, J. Morais, and A. Bowhill, in Microcrystalline and Nanocrystalline Semiconductors, edited by L. Brus, M. Hirose, R. W. Collins, F. Koch, and C. C. Tsai, MRS Symposia Proceedings No. 358 (Materials Research Society, Pittsburgh, 1995), p. 825;D. A. Grützmacher, E. F. Steigmeier, H. Auderset, R. Morf, B. Delley, and R. Wessicken, ibid., p. 833;
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17
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85037875126
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Calculations have been performed for the Si-O-Si bond angle ranging from (Formula presented) to (Formula presented) and have found that main conclusions presented here are not changed at all.
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Calculations have been performed for the Si-O-Si bond angle ranging from (Formula presented) to (Formula presented) and have found that main conclusions presented here are not changed at all.
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19
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0344954405
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K. Hattori, T. Mori, H. Okamoto, and Y. Hamakawa, Appl. Phys. Lett. 53, 2170 (1988).
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No. 283 (Microcrystalline and Nanocrystalline Semiconductors, Materials Research Society L. Brus, M. Hirose, R. W. Collins, F. Koch, and C. C. Tsai
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R. Tsu, L. Ioriatti, J. F. Harvey, H. Shen, and R. A. Lux, in Microcrystalline and Nanocrystalline Semiconductors, edited by L. Brus, M. Hirose, R. W. Collins, F. Koch, and C. C. Tsai, MRS Symposia Proceedings No. 283 (Materials Research Society, Pittsburgh, 1993), p. 437;
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NATO Advanced Study Institute Series B: Physics, S. Ossicini L. T. Canham D. C. Bensahel Kluwer Academic Publishers, Dordrecht
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R. Tsu and D. Babic, in Optical Properties of Low Dimensional Silicon Structures, edited by D. C. Bensahel, L. T. Canham, and S. Ossicini, NATO Advanced Study Institute Series B: Physics (Kluwer Academic Publishers, Dordrecht, 1993), p. 203.
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Tsu, R.1
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85037918254
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The effective Bohr radius is (Formula presented) in bulk. The Bohr radius of a two-dimensional flat exciton (Formula presented) which is estimated to be 1.65 nm for the Si layers under study, using (Formula presented)
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The effective Bohr radius is (Formula presented) in bulk. The Bohr radius of a two-dimensional flat exciton (Formula presented) which is estimated to be 1.65 nm for the Si layers under study, using (Formula presented)
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