Fabrication of C60 nanostructures by selective growth on GaSe/MoS2 and InSe/MoS2 heterostructure substrates

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 670-675

  Ueno, Keiji ^a   Sasaki, Kentaro ^a   Nakahara, Tomonori ^a   Koma, Atsushi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEPOSITION; DIFFUSION IN SOLIDS; FULLERENES; HETEROJUNCTIONS; MOLYBDENUM COMPOUNDS; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

GALLIUM SELENIDE; INDIUM SELENIDE; MOLYBDENUM DISULFIDE;

NANOSTRUCTURED MATERIALS;

EID: 17444440854     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00136-6     Document Type: Article

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