Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 14-17

  Mabrook, M F ^a   Jombert, A S ^a   Machin, S E ^a   Pearson, C ^a   Kolb, D ^a   Coleman, K S ^a   Zeze, D A ^a   Petty, M C ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

Author keywords

C60; Carbon nanotubes; Gold nanoparticles; Memory devices; PMMA

Indexed keywords

CAPACITANCE; FIBER OPTIC SENSORS; GOLD DEPOSITS; HYSTERESIS; METAL INSULATOR BOUNDARIES; METAL NANOPARTICLES; MIS DEVICES; POLYESTERS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SUBSTRATES; YARN;

C 60; CHARGE STORAGE; GOLD NANOPARTICLE; GOLD NANOPARTICLES; MEMORY EFFECTS; MEMORY WINDOW; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES; POLYMETHYLMETHACRYLATE; STORAGE ELEMENTS; STRUCTURE-BASED;

GOLD NANOPARTICLES;

EID: 67349127272     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.003     Document Type: Article

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