SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 39, Issue 2, 2010, Pages 258-261

Preparation and ferroelectric properties of Ho 3+/Mo 6+ cosubstituted Bi 4Ti 3O 12 thin films by sol-gel method

(4) Fu, Chengju a Huang, Zhixiong a Li, Jie b Guo, Dongyun a

a WUHAN UNIVERSITY OF TECHNOLOGY (China)

b CHONGQING UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

(Bi 3.6Ho 0.4) 3.99Ti 2.985Mo 0.015O 12 thin films; Cosubstitution; Ferroelectric properties; Sol gel method

Indexed keywords

APPLIED FIELD; AURIVILLIUS STRUCTURE; BISMUTH TITANATE; COSUBSTITUTION; CRYSTAL STRUCTURE AND MORPHOLOGY; DIELECTRIC CONSTANTS; FATIGUE-FREE CHARACTERISTICS; FERROELECTRIC PROPERTY; SI SUBSTRATES; SINGLE PHASE; SOL-GEL METHOD; SOL-GEL METHODS;

BISMUTH; CRYSTAL STRUCTURE; DIELECTRIC LOSSES; FERROELECTRIC FILMS; FERROELECTRICITY; GELS; HOLMIUM; MOLYBDENUM; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILMS;

FILM PREPARATION;

EID: 77951253329 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0976-z Document Type: Article

Times cited : (15)

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