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Journal Wuhan University of Technology, Materials Science Edition

Volumn 23, Issue 5, 2008, Pages 622-624

Effect of la doping on microstructure and ferroelectric properties of Bi4Ti3O12 thin films prepared by sol-gel method

(3) Fu, Chengju a Huang, Zhixiong a Guo, Dongyun b

a WUHAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

Bi3.25La0.75Ti 3O12 thin films; Bi4Ti 3O12 thin films; Fatigue; Ferroelectric properties; La doping; Sol gel preparation

Indexed keywords

BISMUTH; COLLOIDS; FERROELECTRIC FILMS; FERROELECTRICITY; GELATION; GELS; LANTHANUM; MICROSTRUCTURE; OXIDE MINERALS; PEROVSKITE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOL-GEL PROCESS; SOL-GELS; SOLIDS; SOLS; THICK FILMS; THIN FILMS; VAPOR DEPOSITION;

BI3.25LA0.75TI 3O12 THIN FILMS; BI4TI 3O12 THIN FILMS; FATIGUE; FERROELECTRIC PROPERTIES; LA DOPING; SOL-GEL PREPARATION;

FILM PREPARATION;

EID: 56749091494 PISSN: 10002413 EISSN: None Source Type: Journal
DOI: 10.1007/s11595-007-5622-0 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.