Plasmon damping below the Landau regime: The role of defects in epitaxial graphene

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Langer, T ^a,b   Baringhaus, J ^a   Pfnur H ^a   Schumacher, H W ^b   Tegenkamp, C ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLE; EPITAXIAL GRAPHENE; EPITAXIAL SYSTEMS; EPITAXIALLY GROWN; FERMI VELOCITIES; FIRST ORDER; GRAPHENE LAYERS; LINEAR DISPERSION; MOMENTUM SOURCES; PLASMON WAVELENGTH; STRONG DAMPING;

DAMPING; DEFECTS; ELECTRONS; ENERGY DISSIPATION; GRAIN BOUNDARIES; GRAPHENE; GRAPHITE; LOW ENERGY ELECTRON DIFFRACTION; OPTICAL DATA STORAGE; PLASMONS; SILICON CARBIDE; SOIL CONSERVATION; SURFACE ROUGHNESS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77951196887     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/3/033017     Document Type: Article

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