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Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

Double photonic quasi-crystal structure effect on GaN-based vertical-injection light-emitting diodes

(6) Huang, Hung Wen a,b Lin, Chung Hsiang b Huang, Zhi Kai a Lee, Kang Yuan b Yu, Chang Chin b Kuo, Hao Chung a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b Luxtaltek Corporation (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SIZES; DRIVING CURRENT; GUIDED LIGHT; ICP-RIE; LIGHT OUTPUT POWER; LIGHT RADIATION; NARROW BEAMS; OUTPUT POWER; PEAK WAVELENGTH; REFLECTED LIGHT; STRUCTURE EFFECT; VERTICAL DIRECTION;

ELECTROMAGNETIC INDUCTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOIMPRINT LITHOGRAPHY; ORGANIC LIGHT EMITTING DIODES (OLED); PIEZOELECTRICITY; QUASICRYSTALS; REACTIVE ION ETCHING;

CRYSTAL STRUCTURE;

EID: 77950854166 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.022101 Document Type: Article

Times cited : (6)

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