Properties of boron and phosphorous incorporated tetrahedral amorphous carbon films grown using filtered cathodic vacuum arc process

Applied Surface Science

Volumn 256, Issue 13, 2010, Pages 4383-4390

  Panwar, O S ^a   Khan, Mohd Alim ^a   Satyanarayana, B S ^b   Kumar, Sushil ^a   Ishpal, ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b NONE   (India)

Author keywords

Activation energy; Conductivity; FCVA; Field emission; ta C: B; ta C: P

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS CARBON; AMORPHOUS FILMS; BORON; ELECTRIC CONDUCTIVITY; ELECTRON EMISSION; FIELD EMISSION; HARDNESS; PHOSPHORUS; SEMICONDUCTOR DOPING; VACUUM APPLICATIONS; VACUUM TECHNOLOGY;

EMISSION CURRENT DENSITY; EMISSION THRESHOLD; FCVA; FIELD EMISSION PROPERTY; FILTERED CATHODIC VACUUM ARC; NEGATIVE SUBSTRATES; TETRAHEDRAL AMORPHOUS CARBON (TA-C) FILMS; TETRAHEDRAL AMORPHOUS CARBON FILMS;

CARBON FILMS;

EID: 77950630473     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.035     Document Type: Article

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