Growth and studies of Si-doped AlN layers

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4939-4941

  Thapa, S B ^a   Hertkorn, J ^a   Scholz, F ^a   Prinz, G M ^a   Leute, R A R ^a   Feneberg, M ^a   Thonke, K ^a   Sauer, R ^a   Klein, O ^a   Biskupek, J ^a   Kaiser, U ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

A1. Cathodoluminescence; A1. Dislocations; A1. HRXRD; A1. TEM; A1. Vacancies; B1. AlN

Indexed keywords

CONCENTRATION (PROCESS); CORUNDUM; ELECTRIC CONDUCTIVITY; EPILAYERS; EPITAXIAL GROWTH; LIGHT EMISSION; LUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SURFACE ACTIVE AGENTS;

A1. CATHODOLUMINESCENCE; A1. DISLOCATIONS; A1. HRXRD; A1. TEM; A1. VACANCIES; B1. ALN;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56249097868     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.091     Document Type: Article

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