Fabrication of diamond nanowires for quantum information processing applications

Diamond and Related Materials

Volumn 19, Issue 5-6, 2010, Pages 621-629

  Hausmann, Birgit J M ^a,b   Khan, Mughees ^a   Zhang, Yinan ^a   Babinec, Tom M ^a   Martinick, Katie ^c   McCutcheon, Murray ^a   Hemmer, Phil R ^d   Lončar, Marko ^a  

^a HARVARD UNIVERSITY   (United States)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c MSC01 1070   (United States)

^d Department of Electrical and Computer Engineering   (United States)

Author keywords

Diamond; ICP; Nanostructure; Nanowire; Reactive ion etching

Indexed keywords

BULK SINGLE CRYSTALS; COLLECTION EFFICIENCY; DIAMOND NANOWIRES; E-BEAM RESIST; EMITTED PHOTONS; ETCH MASK; ETCH RATES; ICP; NITROGEN VACANCIES; NUMERICAL MODELING; OPTICAL MODES; OPTIMAL RANGES; ORDERED ARRAY; POLYCRYSTALLINE; POLYCRYSTALLINE DIAMONDS; POLYCRYSTALLINE NANOWIRES; QUANTUM-INFORMATION PROCESSING; SINGLE CRYSTAL DIAMOND; SPIN ON GLASS; TOP-DOWN FABRICATION;

COLOR CENTERS; DATA PROCESSING; DIAMONDS; ELECTROMAGNETIC INDUCTION; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; FABRICATION; GLASS; GOLD; INDUCTIVELY COUPLED PLASMA; IONS; NANOPARTICLES; NANOWIRES; OXYGEN; PHOTORESISTS; QUANTUM OPTICS; SILICON COMPOUNDS; SINGLE CRYSTALS; SPIN DYNAMICS; SPIN GLASS;

REACTIVE ION ETCHING;

EID: 77950369368     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2010.01.011     Document Type: Article

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