Al-doped ZnO: Electronic, electrical and structural properties

Journal of Physics and Chemistry of Solids

Volumn 71, Issue 5, 2010, Pages 784-787

  Maldonado, Frank ^a   Stashans, Arvids ^a  

^a UNIVERSIDAD TÉCNICA PARTICULAR DE LOJA   (Ecuador)

Author keywords

A. Electronic materials; A. Oxides; D. Defects; D. Electronic structure; D. Microstructure

Indexed keywords

A. ELECTRONIC MATERIALS; A. OXIDES; D. DEFECTS; D. ELECTRONIC STRUCTURE; ELECTRONIC MATERIALS;

ALUMINUM; CRYSTAL IMPURITIES; DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ELECTRONS; IONIZATION POTENTIAL; MICROSTRUCTURE; QUANTUM CHEMISTRY; ZINC; ZINC ALLOYS; ZINC OXIDE;

ATOMS;

EID: 77950338677     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2010.02.001     Document Type: Article

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