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Volumn 47, Issue 4 PART 2, 2008, Pages 2999-3006

Theoretical study on electronic and electrical properties of nanostructural ZnO

Author keywords

DFT; Electrical conductivity; Electronic structure; Nanotube; Tight binding quantum chemistry; ZnO

Indexed keywords

BINDING ENERGY; CHEMISTRY; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ENERGY GAP; FULLERENES; GALLIUM ALLOYS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; OXYGEN; OXYGEN VACANCIES; QUANTUM THEORY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; STEREOCHEMISTRY; ZINC ALLOYS; ZINC OXIDE;

EID: 54249133475     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2999     Document Type: Article
Times cited : (27)

References (83)
  • 22
    • 17044380667 scopus 로고    scopus 로고
    • Semicond. Sci. Tcchnol
    • G. Yi, C. Wang, and W. Park; Semicond. Sci. Tcchnol. 20 (2005) 22.
    • (2005) , vol.20 , pp. 22
    • Yi, G.1    Wang, C.2    Park, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.