Dynamic range enhancement of nonlinear nanomechanical resonant cantilevers for highly sensitive NEMS gas/mass sensor applications

Journal of Micromechanics and Microengineering

Volumn 20, Issue 4, 2010, Pages

  Kacem, N ^a,b   Arcamone, J ^b   Perez Murano, F ^c   Hentz, S ^b  

^a CNRS   (France)

^b CEA LETI   (France)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; ANALYTICAL SIMULATIONS; CMOS CIRCUITS; CRITICAL AMPLITUDES; DESIGN PARAMETERS; DOUBLY CLAMPED BEAM; DYNAMIC RANGE; DYNAMIC RANGE ENHANCEMENT; ELECTRICAL MEASUREMENT; EULER-BERNOULLI; FRINGING FIELD EFFECTS; HIGHLY SENSITIVE; LARGE AMPLITUDE; LARGE DISPLACEMENTS; LINEAR BEHAVIOR; MONOLITHICALLY INTEGRATED; MULTIPHYSICS MODEL; NANOSTENCILS; NON-LINEARITY; RESONANT CANTILEVER; SENSOR APPLICATIONS; SENSOR PERFORMANCE; SILICON NANODEVICES; WAFER-SCALE;

CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK ANALYSIS; ELECTROSTATIC ACTUATORS; NANOSTRUCTURED MATERIALS; NONLINEAR EQUATIONS; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; SILICON WAFERS;

NANOCANTILEVERS;

EID: 77949880813     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/4/045023     Document Type: Article

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