Flash-lamp annealing of semiconductor materials-Applications and process models

Vacuum

Volumn 81, Issue 10, 2007, Pages 1301-1305

  McMahon, R A ^a   Smith, M P ^a,b   Seffen, K A ^a   Voelskow, M ^b   Anwand, W ^b   Skorupa, W ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Amorphous silicon; Annealing; Flash lamp; Ion implantation; Modelling

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; TEMPERATURE DISTRIBUTION; THERMAL STRESS;

FLASH LAMP ANNEALING; STRUCTURAL MODELS; TEMPERATURE PROFILES;

SEMICONDUCTOR MATERIALS;

EID: 34249949421     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2007.01.033     Document Type: Article

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