Thin active layer a-Si:H thin-film transistors

IEEE Electron Device Letters

Volumn 18, Issue 3, 1997, Pages 117-119

  Thomasson, D B ^a,b   Dayawansa, M ^a   Chang, J H ^a   Jackson, T N ^a,b  

^a Pennsylvania State University   (United States)

^b IEEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; HYDROGENATION; LIQUID CRYSTAL DISPLAYS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS; SATURATION CURRENTS;

THIN FILM TRANSISTORS;

EID: 0031103098     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.556099     Document Type: Article

References (9)

1. W. E. Howard, "Limitations and prospects of a-Si:H TFT's," J. SID, vol. 3, no. 3, pp. 127-132, Dec. 1995.
2. N. Ibaraki, "a-Si TFT technologies for large-size and high-pixel-density AM-LCD's," in IUMRS-ICEM'94 Symp. Proc., vol. 3, pp. 523-533.
3. S. Uchikoga, M. Akiyama, T. Koizumi, M. Ikeda, and K. Suzuki, "The effect of contact overlap distance on a-Si TFT performance," in Mat. Res. Soc. Symp. Proc., 1992, vol. 258, pp. 1025-1030.
4. J. Y. Tang and S. E. Laux, "MONTE: A program to simulation the heterojunction devices in two dimensions," IEEE Trans. Computer-Aided Design, vol. CAD-5, pp. 645-052, Oct. 1986.
5. M. Dayawansa, "Modeling of hydrogenated amorphous silicon thin-film transistors," M.S. thesis, Pennsylvania State Univ., University Park, Aug. 1995.
6. J. G. Shaw and M. Hack, "Simulations of short-channel and overlap effects in amorphous silicon thin-film transistors," J. Appl. Phys., vol. 65, no. 5, pp. 2124-2129, Mar. 1989.
7. T. Kashiro, S. Kawamura, N. Imai, K. Fukuda, K. Matsumura, and N. Ibaraki, "Importance of first layer thickness on TFT characteristics using a-Si:H deposited by 2-step process," J. Non-Cryst. Solids vol. 198-200, part 2, pp. 1130-1133, 1996.
8. R. Hattori and J. Shirafuji, "Numerical simulation of tunnel effect transistors employing internal field emission of Schottky barrier junction," Jpn. J. Appl. Phys., vol. 33, pp. 612-617, 1994.
9. A. Nakae, R. Hattori, and J. Shirafuji, "A new type TFT with unique operation and simple fabrication process," in Mat. Res. Soc. Symp. Proc., Jan. 1994, vol. 345, pp. 217-222.