Si nano-dots and nano-pyramids dependent light emission and charge accumulation in ITO/SiOx/p-Si MOS Diode

IEEE Journal of Quantum Electronics

Volumn 46, Issue 1, 2010, Pages 121-127

  Lien, Yu Chung ^a   Pai, Yi Hao ^a   Lin, Gong Ru ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Memory; Mos diode; Nonvolatile

Indexed keywords

AREA DENSITY; C-V HYSTERESIS; CHARGE ACCUMULATION; CHARGE LOSS; COUNTER-CLOCKWISE; CURRENT BLOCKING; ELECTRO-LUMINESCENT; FLAT-BAND VOLTAGE SHIFT; MOS DIODE; NANODOTS; NON-VOLATILE; NONLINEAR FUNCTIONS; SI NANODOTS; TURN ON VOLTAGE; VOLTAGE DELAY; VOLUME DENSITY;

DIODES; ELECTRIC FIELD EFFECTS; SEMICONDUCTING SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77949446158     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2030151     Document Type: Article

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