Structural, electrical and optical properties of Dy doped ZnO thin films grown by buffer assisted pulsed laser deposition

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 6, 2010, Pages 1838-1843

  Ajimsha, R S ^a   Das, A K ^a   Singh, B N ^a   Misra, P ^a   Kukreja, L M ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

PLD; TCO; Thin film; ZnO

Indexed keywords

BAND GAP NARROWING; BAND GAPS; BLUE SHIFT; BURSTEIN-MOSS SHIFT; COMPETING EFFECTS; DOPED ZNO; DY DOPING; ELECTRICAL AND OPTICAL PROPERTIES; INTRABAND TRANSITIONS; MINIMUM VALUE; NEAR BAND EDGE; PHOTOLUMINESCENCE INTENSITIES; PREFERENTIAL ORIENTATION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SAPPHIRE SUBSTRATES; TCO; TRANSPARENT CONDUCTIVE; ZNO; ZNO THIN FILM;

BIOACTIVITY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CONDUCTIVE FILMS; DEPOSITION; DOPING (ADDITIVES); DYSPROSIUM; ELECTRIC PROPERTIES; ENERGY GAP; LUMINESCENT DEVICES; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; SULFUR COMPOUNDS; THIN FILM DEVICES; THIN FILMS; VAPOR DEPOSITION;

ZINC OXIDE;

EID: 77949269545     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.02.005     Document Type: Article

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