Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

Solid State Communications

Volumn 150, Issue 15-16, 2010, Pages 734-738

  Late, Dattatray J ^a   Ghosh, Anupama ^a,b   Subrahmanyam, K S ^a   Panchakarla, L S ^a   Krupanidhi, S B ^b   Rao, C N R ^a,b  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

A. Field effect transistor; A. Graphene; D. Doping; D. Mobility

Indexed keywords

A. FIELD-EFFECT TRANSISTOR; AMBIPOLAR; ARC DISCHARGE; GRAPHENES; IN-SITU; N-DOPED; NITROGEN-DOPED; P-TYPE; SINGLE LAYER;

BORON; DOPING (ADDITIVES); GRAPHENE; GRAPHITE;

FIELD EFFECT TRANSISTORS;

EID: 77749306166     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.01.030     Document Type: Article

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