Electrical characteristics of SiO2/high-k dielectric stacked tunnel barriers for nonvolatile memory applications

Journal of the Korean Physical Society

Volumn 55, Issue 1, 2009, Pages 116-119

  Park, Goon Ho ^a   Kim, Kwan Su ^a   Jung, Myung Ho ^a   Cho, Won Ju ^a   Jung, Jongwan ^b  

^a Kwangwoon University   (South Korea)

^b Sejong Unveristy ^*  (South Korea)

Author keywords

Crested barrier; Non volatile memory; Tunnel barrier engineering; VARIOT barrier

Indexed keywords

EID: 69249200552     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.55.116     Document Type: Article

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