MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 1001-1004

  Liu, Yaocheng ^a   Gopalakrishnan, Kailash ^a   Griffin, Peter B ^a   Ma, Kai ^a   Deal, Michael D ^a   Plummer, James D ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTIONAL TEM (XTEM); GE-ON-INSULATOR SUBSTRATES; MELT GROWTH; MICRO-CRUCIBLES; GE ON INSULATORS; GROWTH TECHNIQUES; HIGH QUALITY; HIGH SPEED PHOTODETECTORS; MOSFETS; P CHANNELS; P-I-N PHOTODETECTORS; RAPID MELT GROWTH; TRIGATE;

CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; ELECTRON MOBILITY; GERMANIUM; IMPULSE RESPONSE; MOSFET DEVICES; GERMANIUM COMPOUNDS; HOLE MOBILITY; PHOTODETECTORS; PHOTONS; SILICON WAFERS;

PHOTODETECTORS; FABRICATION;

EID: 21644433191     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. J. J. Rosenberg and S. C. Martin, IEEE Electron Device Lett. 9, 639 (1998).
2. S.-I. Takagi, 2003 Symposium on VLSI Technology, Digest of Technical Papers, p. 115 (2003).
3. C. H. Huang, M. Y. Yang, A. Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M.-F. Li, and D. L. Kwong, 2003 Symposium on VLSI Technology, Digest of Technical Papers, p. 119 (2003).
4. Y. Liu, M.D. Deal, and J.D. Plummer, Applied Physics Letters, 84 (2004) pp. 2563.
5. B. J. Greene, J. Valentino, J. L. Hoyt, and J. F. Gibbons, Mater. Res. Soc. Symp. Proc. 609, A9.3.1 (2000).
6. H. Shang, H. Okorn-Schmidt, K.K. Chan, et al. IEDM Tech. Dig., (2002) pp. 441.