Implantation of phosphorous and arsenic ions in germanium

Nuclear Inst. and Methods in Physics Research, B

Volumn 71, Issue 4, 1992, Pages 406-411

  Benourhazi, K ^a   Ponpon, J P ^a  

^a Centre de Recherches Nucleaires   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242501256     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(92)95358-X     Document Type: Article

References (11)

1. Ion Implanted N-Type Contact for High-Purity Germanium Radiation Detectors
2. A model for the formation of amorphous Si by ion bombardment
3. Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals
4. Radiation damage and substitutional chemical impurity effects in single-crystal germanium bombarded with 40-keV B+, Al+, Ga+, Ge+, P+, As+, and Sb+ions
5. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering