Defect-related photoluminescence in Mg-doped GaN nanostructures

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4903-4906

  Reshchikov, M A ^a   Shahedipour Sandvik, F ^b   Messer, B J ^b   Jindal, V ^b   Tripathi, N ^b   Tungare, M ^b  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

GaN; Nanostructures; Photoluminescence

Indexed keywords

ALN SUBSTRATES; BLUE LUMINESCENCE BANDS; DIFFERENT ORIGINS; GAN; GAN NANOSTRUCTURES; GAN PYRAMIDS; GAN: MG; GROWTH CONDITIONS; LOW TEMPERATURES; MG-DOPED; MOCVD; PHONON REPLICA; PHONON STRUCTURES; SHALLOW DONORS; SI SUBSTRATES;

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GALLIUM NITRIDE; NANOSTRUCTURES; PHONONS; PHOTOLUMINESCENCE; RESISTORS; SAPPHIRE; SECONDARY BATTERIES; SILICON; SUBSTRATES; ZINC;

GALLIUM ALLOYS;

EID: 74349096331     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.232     Document Type: Article

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