The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures

Chinese Physics B

Volumn 17, Issue 7, 2008, Pages 2689-2695

  Zhang, Jin Feng ^a   Mao, Wei ^a   Zhang, Jin Cheng ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN heterostructures; Interface roughness; Mobility; Two dimensional electron gas

Indexed keywords

ALLOYS; ALUMINUM; CRYSTALS; ELECTRIC CONDUCTIVITY OF GASES; ELECTRON GAS; ELECTRONS; GALLIUM NITRIDE; IONIZATION OF GASES; MECHANISMS; MOLECULAR BEAM EPITAXY; SINGLE CRYSTALS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

2DEG DENSITY; ACOUSTIC DEFORMATION; AL-CONTENT; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ALLOY DISORDER SCATTERING; ALLOY DISORDERING; BARRIER LAYER; COMBINED EFFECTS; HETEROSTRUCTURES; HIGH AL CONTENT; INTERFACE ROUGHNESS; INTERFACE ROUGHNESS SCATTERING; LOW TEMPERATURES; MOBILITY; SCATTERING MECHANISMS; SCATTERING PROCESSES; STRESS ACCUMULATION;

SCATTERING;

EID: 49749129974     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/7/055     Document Type: Article

References (22)

1. Wu Y F, Saxler A, Moore M, Smith R P, Sheppard S, Chavarkar P M, Wisleder T, Mishra U K and Parikh P 2004 IEEE Electron Device Lett. 25 117
2. Smorchkova I P, Elsass C R, Ibbetson J P, Vetury R, Heying B, Fini P, Haus E, Denbaars S P, Speck J S and Mishra U K 1999 J. Appl. Phys. 86 4520
3. Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W and Hilsenbeck 1999 Japan. J. Appl. Phys. 85 3222
4. Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A and Stutzmann M 2000 J. Appl. Phys. 87 334
5. Miyoshi M, Egawa T and Ishikawa H 2005 J. Vac. Sci. Technol. B 23 1527
6. Keller S, Parish G, Fini P T, Heikman S, Chen C H, Zhang N, Den Baars S P, Mishra U K and Wu Y F 1999 J. Appl. Phys. 86 5850
7. Wu Y F, Keller B P, Fini P, Keller S, Jenkins T J, Kehias L T, Denbaars S P and Mishra U K 1998 IEEE Electron Device Lett. 19 50
8. Arulkumaran S, Egawa T, Ishikawa H and Jimbo T 2003 J. Vac. Sci. Technol. B 21 888
9. Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M and Oda O 2004 J. Cryst. Growth 272 293
10. Elsass C R, Poblenz C, Heying B, Fini P, Petroff P M, Denbaars S P, Mishra U K, Speck J S, Saxler A, Elhamrib S and Mitchel W C 2001 Japan. J. Appl. Phys. Part 1 40 6235
11. Ridley B K, Ambacher O and Eastman L F 2000 Semicond. Sci. Technol. 15 270
12. Ibbetson J P, Fini P T, Ness K D, Den Barrs S P, Speck J S and Mishra U K 2000 Appl. Phys. Lett. 77 250
13. Fang F F and Howard W E 1966 Phys. Rev. Lett. 16 797
14. Davies J H 1998 The Physics of Low Dimensional Semiconductor (Cambridge: Cambridge University Press)
15. Zanato D, Gokden S, Balkan N, Ridley B K and Schaff W 2004 Semicond. Sci. Tech. 19 427
16. Jena D, Gossard A C and Mishra U K 2000 Appl. Phys. Lett. 76 1707
17. Bastard G 1983 Appl. Phys. Lett. 43 591
18. Ferry D K and Goodnick S M 1999 Transport in Nanostructures (Cambridge: Cambridge University Press)
19. Levinshtein M E, Rumyantsev S L and Shur M S 2001 Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe (New York: John Wiley & Sons)
20. Knap W, Contreras S, Alause H, Skierbiszewski C, Camassel J, Dyakonov M, Robert J L, Yang J, Chen Q, Khan M A, Sadowski M L, Huant S, Yang F H, Goian M, Leotin J and Shur M S 1997 Appl. Phys. Lett. 70 2123
21. Jena D 2003 Polarization Induced Electron Populations in III-V Nitride Semiconductors: Transport, Growth, and Device Applications (PhD Thesis of University of California, Santa Barbara)
22. Schaadt D M, Miller E J, Yu E T and Redwing J M 2001 Appl. Phys. Lett. 78 88