Zinc oxide - Analogue of GaN with new perspective possibilities

Crystal Research and Technology

Volumn 39, Issue 11, 2004, Pages 980-992

  Karpina, V A ^a   Lazorenko, V I ^a   Lashkarev, C V ^a   Dobrowolski, V D ^a   Kopylova, L I ^a   Baturin, V A ^b   Pustovoytov, S A ^b   Karpenko, A Ju ^b   Eremin, S A ^b   Lytvyn, P M ^c   Ovsyannikov, V P ^d   Mazurenko, E A ^d  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b INSTITUTE OF APPLIED PHYSICS   (Ukraine)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^d INSTITUTE OF HYDROBIOLOGY   (Ukraine)

Author keywords

Magnetron sputtering; PEMOCVD; Random laser; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; QUANTUM EFFICIENCY; STOICHIOMETRY;

OXYGEN ATOMS; PEMOCVD; RANDOM LASER; TAPPING MODES;

ZINC OXIDE;

EID: 9744229302     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310283     Document Type: Article

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