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Volumn 42, Issue 5, 2010, Pages 1583-1589

Electronic state and momentum matrix of H-passivated silicon nanonets: A first-principles calculation

Author keywords

Direct bandgap; First principles calculation; Momentum matrix; Silicon nanonet

Indexed keywords

BAND EDGE; BAND GAPS; BAND-GAP SEMICONDUCTORS; BULK-LIKE; ENERGY LEVEL; FIRST-PRINCIPLES CALCULATION; LIGHT EMISSION EFFICIENCY; MATRIX; MOMENTUM MATRIX ELEMENT; NANO-NET; NANOFABRICATION; OPTOELECTRONIC INTEGRATED CIRCUITS; QUANTUM CONFINEMENT EFFECTS; SILICON BASED OPTOELECTRONICS; SILICON NANOSTRUCTURES; SOLID-STATE LIGHT SOURCES;

EID: 77349086853     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.12.049     Document Type: Article
Times cited : (8)

References (37)
  • 9
    • 77349096511 scopus 로고
    • Tsu R. Nature 364 (1993) 6432
    • (1993) Nature , vol.364 , pp. 6432
    • Tsu, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.