Towards silicon based light emitter utilising the radiation from dislocation networks

Materials Science and Engineering: B

Volumn 134, Issue 2-3 SPEC. ISS., 2006, Pages 109-113

  Arguirov, T ^a   Kittler, M ^a   Seifert, W ^a   Yu, X ^a   Reiche, M ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b MPI Halle   (Germany)

Author keywords

D bands; Dislocations; LED; Luminescence; Silicon

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; LIGHT EMITTING DIODES; OPTICAL INTERCONNECTS; PHOTOLUMINESCENCE; SILICON WAFERS;

DISLOCATION NETWORKS; MISFIT DISLOCATION; MISORIENTATION; ROOM TEMPERATURE;

DISLOCATIONS (CRYSTALS);

EID: 33750357011     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.07.020     Document Type: Article

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